'''Electronइलेक्ट्रॉन beamकिरण lithographyअश्मलेखन''' (often abbreviated as '''e-beam lithography''') isएक theऐसी practiceप्रणाली ofहै scanning a beam ofजिसमें [[electronइलेक्ट्रान|इलेक्ट्रानों]]sinके aकिरण patternedपुंज fashionको acrossसतह aपर surfaceलेपे covered[[रैसिस्ट|<span withtitle="resist">रैसिस्ट</span>]] aपर filmएक (calledसांचे theके [[resist]]).अनुसार क्रमवीक्षित किया जाता है।<ref name="mccord">{{cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=[http://www.cnf.cornell.edu/cnf_spietoc.html SPIE Handbook of Microlithography, Micromachining and Microfabrication] |year=2000 |chapter=2 }}</ref>
इसके दृष्य [[प्रकाश|<span title="Light">प्रकाश</span>]] के [[विवर्तन सीमा|<span title=" diffraction limited system">विवर्तन सीमा</span>]] को लांघना इस प्रणाली का मुख्य लाभ है। इस कारण [[नैनो-|नैनो]]मीटर स्तर पर इसका प्रयोग होता है।
The primary advantage of electron beam lithography is that it is one of the ways to beat the [[diffraction limit]] of light and make features in the [[nanometer]] regime. This form of lithography has found wide usage in [[photomask|mask]]-making used in [[photolithography]], low-volume production of semiconductor components, and research & development.
